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| Bulletin I2233 rev. A 11/05 SAFEIR Series 40TTS12PbF PHASE CONTROL SCR Lead-Free ("PbF" suffix) Description/ Features The 40TTS12PbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 140C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. VT ITSM < 1.6V @ 80A = 350A VRRM = 1200V Major Ratings and Characteristics Characteristics IT(AV) Sinusoidal waveform IRMS VRRM / VDRM ITSM VT dv/dt di/dt T J Package Outline Units A Values 25 40 1200 350 TJ = 25C 1.6 500 150 - 40 to 140 A V A V V/s A/s C TO-220 www.irf.com 1 40TTS12PbF SAFEIR Series Bulletin I2233 rev. A 11/05 Voltage Ratings VRRM, maximum Part Number peak reverse voltage V 40TTS12PbF 1200 VDRM , maximum peak direct voltage V 1200 TJ C -25 to 140 Absolute Maximum Ratings Parameters IT(AV) Max. Average On-state Current IRMS ITSM 2 40TTS.. 25 40 300 350 450 630 Units A Conditions @ TC = 93 C, 180 conduction half sine wave Max. RMS On-state Current Max. Peak One Cycle Non-Repetitive Surge Current 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied As 2 It Max. I t for fusing 2 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied I2t VTM rt Max. I 2t for fusing Max. On-state Voltage Drop On-state slope resistance 6300 1.6 11.4 0.96 0.5 10 100 200 500 150 A2s V m V mA t = 0.1 to 10ms, no voltage reapplied @ 80A, TJ = 25C TJ = 140C VT(TO) Threshold Voltage IRM/IDM Max.Reverse and Direct Leakage Current IH IL Holding Current Max. Latching Current TJ = 25 C TJ = 140 C VR = rated VRRM/ VDRM mA mA V/s A/s Anode Supply = 6V, Resistive load, Initial IT = 1A Anode Supply = 6V, Resistive load dv/dt Max. Rate of Rise of off-state Voltage di/dt Max. Rate of Rise of turned-on Current 2 www.irf.com 40TTS12PbF SAFEIR Series Bulletin I2233 rev. A 11/05 Triggering Parameters PGM Max. peak Gate Power PG(AV) Max. average Gate Power + IGM Max. paek positive Gate Current - VGM Max. paek negative Gate Voltage IGT Max. required DC Gate Current to trigger VGT Max. required DC Gate Voltage to trigger VGD IGD Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger 0.2 1.5 mA TJ = 140C, VDRM = rated value TJ = 140C, VDRM = rated value 1.3 V Anode supply = 6V, resistive load, TJ = 25C 40TTS.. 8.0 2.0 1.5 10 35 Units W Conditions A V mA Anode supply = 6V, resistive load, TJ = 25C Switching Parameters tgt trr tq Typical turn-on time Typical reverse recovery time Typical turn-off time 40TTS.. 0.9 4 110 Units s TJ = 25C TJ = 140C Conditions Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typ. Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Min. Max. 0.5 2 (0.07) 6 (5) 12 (10) g (oz.) Kg-cm (Ibf-in) Mounting surface, smooth and greased 60 40TTS.. - 40 to 140 - 40 to 140 0.8 Units C Conditions RthJC Max. Thermal Resistance Junction C/W DC operation TO-220AC www.irf.com 3 40TTS12PbF SAFEIR Series Bulletin I2233 rev. A 11/05 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 140 RthJC (DC) = 0.8 C/W 140 RthJC (DC) = 0.8 C/W 130 120 110 100 90 80 70 0 5 10 15 20 25 30 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Conduction Angle 130 120 Conduction Period 110 100 90 80 70 0 5 30 60 90 120 180 DC 30 60 90 120 180 10 15 20 25 30 35 40 45 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 60 50 40 30 20 10 0 0 5 10 15 20 25 30 Average On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 70 60 50 40 180 120 90 60 30 RMS Limit Conduction Angle DC 180 120 90 60 30 30 RMS Limit 20 10 Tj = 125C Conduction Period Tj = 125C 0 0 10 20 30 40 Average On-state Current (A) Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 280 260 240 220 200 180 160 140 120 1 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 350 Of Conduction May Not Be Maintained. Initial Tj = 125C No Voltage Reapplied 300 Rated Vrrm Reapplied 250 200 150 100 0.01 10 100 0.1 1 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current 4 www.irf.com 40TTS12PbF SAFEIR Series Bulletin I2233 rev. A 11/05 1000 Instantaneous On-state Current (A) Tj = 25C Tj = 125C 100 10 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 s, tp >= 6 s (1) PGM = 40 W, tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) T = -10 C J 1 VGD T = 25 C J T = 140 C J (4) (3) (2) (1) IGD Frequency Limited by PG(AV) 0.1 0.001 0.01 0.1 1 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics 10 100 Transient Thermal Impedance ZthJC (C/W) 1 Steady State Value (DC Operation) 0.1 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 9 - Thermal Impedance ZthJC Characteristics www.irf.com 5 40TTS12PbF SAFEIR Series Bulletin I2233 rev. A 11/05 Outline Table 10.54 (0.41) MAX. 3.78 (0.15) 3.54 (0.14) 15.24 (0.60) 14.84 (0.58) 123 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03) Base Common Cathode 2 1.32 (0.05) DIA. 6.48 (0.25) 6.23 (0.24) 2 1.22 (0.05) 2.92 (0.11) 2.54 (0.10) TERM 2 0.10 (0.004) 2.89 (0.11) 2.64 (0.10) 123 4.57 (0.18) 4.32 (0.17) 0.61 (0.02) MAX. 5.08 (0.20) REF. TO-220 Dimensions in millimeters (inches) 1 Anode 2 Common Cathode 3 Anode Part Marking Information EXAMPLE: THIS IS A 40TTS12 LOT CODE 1789 ASSEMBLED ON WW 19, 2001 INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 1 = 2001 WEEK 19 P = LEAD-FREE 6 www.irf.com 40TTS12PbF SAFEIR Series Bulletin I2233 rev. A 11/05 Ordering Information Table Device Code 40 1 T 2 T 3 S 4 12 5 PbF 6 1 2 3 4 5 6 - Current Rating, RMS value Circuit Configuration T = Single Thyristor Package T = TO-220 Type of Silicon S = Standard Recovery Rectifier Voltage Rating (12 = 1200V) none = Standard Production PbF = Lead-Free Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/05 www.irf.com 7 |
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